VI Systems GmbH, Berlin, Germany, EU
Position: Chief Executive Officer of VI Systems GmbH, Berlin, Germany; Professor at Academic University and Abraham Ioffe Institute, St. Petersburg, Russian Federation
Specialization: Semiconductors, Optoelectronics, Lasers, Quantum Dot Hetero-structures
At the NANOCON conference Prof. Dr. Ledentsov will deliver the invited lecture "Quantum dots for semiconductor devices".
Education and Career Accomplishments:
Nikolay Ledentsov has been educated as an Engineer in Opto-Electronics. He graduated from the Electrical Engineering Institute in Leningrad in 1982 and the same year started his work at the Ioffe Institute at the laboratory of Prof. Zh. I. Alferov (Nobel Prize in Physics 2000). He received Degrees of Candidate and Doctor of Physics and Mathematics from the Ioffe institute in 1987 and 1994, respectively. In 1990-1991, with the Alexander Karpinsky Fellowship he was a guest scientist at the Max-Planck-Institut für Festkörperforschung in Stuttgart, Germany, at the department of Prof. K. von Klitzing (Nobel Prize in Physics 1985). In 1992, Prof. Ledentsov became a Professor (Full Professor since 1994) at the Electrical Engineering University of St. Petersburg. In 1998-2001 (Spring-Summer semesters), he served as DAAD Professor at the TU Berlin. In 2003-2006, he holds Mercator professorship (DFG) at the TU Berlin.
He has more than 25 years of experience in semiconductor research at the Abraham Ioffe Institute and Academic University (Chief Scientist, Professor), both in St. Petersburg, and in the optoelectronics industry where he took Managing Director and Director positions. Since 1994, he has been involved in close scientific collaboration with the Institut für Festkörperphysik of the Technical University of Berlin. He is Member of the Russian Academy of Sciences and Member of the Scientific Boards of the Abraham Ioffe Institute and the Academic University.
Since 2006 he founded and became Chief Executive Officer of VI Systems GmbH. The company is a fabless developer and producer of components and assemblies for high speed optical data transmission.
Main interests of N. Ledentsov are in the field of physics and technology of semiconductor nanostructures and the related devices, particularly quantum dots (QD) heterostructures, such as InAs/GaAs QDs and their applications in high speed nanophotonic devices.
Summary of publication activity and awards:
Nikolay Ledentsov has above 800 publications in peer-reviewed journals which received more than 31 000 citations. His Hirsch factor is 80. He has authored and co-authored 30 US patents and the related patent families.
He is awarded the 1996 Young Scientist Award of the International Symposium on Compound Semiconductors “for his pioneering and outstanding contributions to the development of physics and MBE growth of InGaAs-GaAs quantum dots and quantum dot lasers”, the Russian State Prize in Science and Technology, the Prize of the Berlin-Brandenburg Academy of Sciences, and other recognitions. Nikolay Ledentsov is Fellow of the Institute of Physics (FInstP) and Senior Member IEEE.